General specifications of Dual Thyristor Module MCC312-18IO1 IXYS and Replacement: Thyristor module specifications MCC312-18IO1 Maximum allowable average forward current (Case temperature) ITAV 320 A Repetitive pulsed reverse voltage VRRM 1800 V Surge current ITSM 9600 A Maximum RMS on-state current IT(RMS) 520 A Safety factor I2t 460.8 kA2·s Threshold voltage VT(TO) 0.80 V RMS current IRMS 600 A Slope resistance rT 0.68 mΩ Turn-off time tq 200 μs Gate trigger voltage VGT 2 V Gate trigger current IGT 150 mA Thermal resistance, junction to case Rth(JC) 0.12 K/W Thermal resistance case to heatsink Rth(CH) 0.04 K/W Design (switches) – dual component Type (circuit diagram) – thyristor-thyristor Weight W 680 g Package Dimensions, mm L×B×H Y1-CU 92x50x52 mm Mounting torque MD 4.5-7 Nm Replacement AS ENERGITM type ASMCC312-18-IO1 Datasheet PDF Part Numbering Guide for Dual Thyristor Module ASMCC312-18-IO1: AS M CC 312 – 18 – I O 1 AS – AS ENERGITM M – Product group: Discrete Semiconductor Module. CC – Circuit topology: two thyristors half-bridge (cathode-anode). 312 – Average Current Rating ITAV, A. 18 – Voltage code x 100 = VRRM. I – Critical dv/dt 1000 V/μs. O – Typical turn-off time. 1 – Version part number.
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